C3039 [Wing Shing]

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION); 硅外延平面型晶体管(概述)
C3039
型号: C3039
厂家: WING SHING COMPUTER COMPONENTS    WING SHING COMPUTER COMPONENTS
描述:

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)
硅外延平面型晶体管(概述)

晶体 晶体管
文件: 总1页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Silicon Epitaxial Planar Transistor  
2SC3039  
GENERAL DESCRIPTION  
Silicon NPN high frequency, high power transistors  
in a plastic envelope, primarily for use in audio and  
general purpose  
TO-220  
QUICK REFERENCE DATA  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
Ptot  
VCEsat  
VF  
tf  
PARAMETER  
CONDITIONS  
TYP  
MAX  
500  
300  
7
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
-
-
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Diode forward voltage  
A
Tmb 25  
50  
2
W
V
IC = 3.0A; IB = 0.3A  
IF = 3.0A  
-
1.5  
2.0  
1.0  
V
Fall time  
IC=3A,IB1=-IB2=0.3A,VCC=60V  
0.4  
s
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
VEBO  
IC  
IB  
Ptot  
Tstg  
Tj  
PARAMETER  
CONDITIONS  
MIN  
MAX  
500  
300  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Emitter-base oltage (open colloctor)  
Collector current (DC)  
VBE = 0V  
-
-
V
V
-
7
A
Base current (DC)  
-
-
2
A
Total power dissipation  
Storage temperature  
Tmb 25  
50  
W
-55  
-
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
TYP  
-
MAX  
0.2  
UNIT  
mA  
mA  
V
Collector-base cut-off current  
Emitter-base cut-off current  
Collector-emitter breakdown voltage  
Collector-emitter saturation voltages  
DC current gain  
VCB=400V  
ICBO  
IEBO  
V(BR)CEO  
VCEsat  
hFE  
fT  
Cc  
ton  
ts  
tf  
VEB=5V  
-
0.2  
IC=1mA  
300  
-
IC = 2.0A; IB = 0.5A  
IC = 0.8A; VCE = 5V  
IC = 1A; VCE = 12V  
VCB = 10V  
2
100  
-
V
15  
25  
120  
Transition frequency at f = 5MHz  
Collector capacitance at f = 1MHz  
On times  
MHz  
pF  
us  
-
IC=3A,IB1=-IB2=0.3A,VCC=60V  
IC=3A,IB1=-IB2=0.3A,VCC=60V  
IC=3A,IB1=-IB2=0.3A,VCC=60V  
1.0  
2.5  
1.0  
Tum-off storage time  
us  
Fall time  
0.4  
us  
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

相关型号:

C304

150 WATTS (AC) DC/DC SINGLE OUTPUT
POWERBOX

C3040C103JGGACAUTO

Ceramic Capacitor, Ceramic
KEMET

C3040C104JCGACAUTO

Ceramic Capacitor, Ceramic
KEMET

C3040C332BBGACAUTO

High Voltage C0G Dielectric, 500 - 3,000 VDC (Automotive Grade)
KEMET

C3040C332BBGACTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET

C3040C332BBGALTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET

C3040C332BCGACAUTO

High Voltage C0G Dielectric, 500 - 3,000 VDC (Automotive Grade)
KEMET

C3040C332BCGACTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET

C3040C332BCGALTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET

C3040C332BDGACAUTO

High Voltage C0G Dielectric, 500 - 3,000 VDC (Automotive Grade)
KEMET

C3040C332BDGACTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET

C3040C332BDGALTU

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
KEMET